&control
   prefix = 'silicon'
   calculation = 'bands'
   verbosity = 'high'
   restart_mode = 'from_scratch'
   wf_collect = .true.
   tstress = .false.
   tprnfor = .false.
   outdir = '.'
   wfcdir = '.'
   pseudo_dir = '../pseudo/ld1'
/
&system
   ibrav = 0
   a = 5.43
   nat = 2
   ntyp = 1
   nbnd = 4
   ecutwfc = 25.0
/
&electrons
   electron_maxstep = 100
   conv_thr = 1.0d-10
   mixing_mode = 'plain'
   mixing_beta = 0.7
   mixing_ndim = 8
   diagonalization = 'david'
   diago_david_ndim = 4
   diago_full_acc = .true.
/
CELL_PARAMETERS alat
       0.000000000   0.500000000   0.500000000
       0.500000000   0.000000000   0.500000000
       0.500000000   0.500000000   0.000000000
ATOMIC_SPECIES
  Si  28.086  Si.UPF
ATOMIC_POSITIONS crystal
  Si  -0.125000000  -0.125000000  -0.125000000
  Si   0.125000000   0.125000000   0.125000000
K_POINTS crystal
    8
  0.000000000  0.000000000  0.000000000   1.0
  0.000000000  0.000000000  0.250000000   8.0
  0.000000000  0.000000000  0.500000000   4.0
  0.000000000  0.250000000  0.250000000   6.0
  0.000000000  0.250000000  0.500000000  24.0
  0.000000000  0.250000000  0.750000000  12.0
  0.000000000  0.500000000  0.500000000   3.0
  0.250000000  0.500000000  0.750000000   6.0
