&control
   prefix = 'silicon'
   calculation = 'bands'
   restart_mode = 'from_scratch'
   wf_collect = .true.
   tstress = .false.
   tprnfor = .false.
   outdir = './'
   wfcdir = './'
   pseudo_dir = './'
   verbosity = 'high'
/
&system
   ibrav = 0
   celldm(1) = 10.2612
   nat = 2
   ntyp = 1
   nbnd = 15
   ecutwfc = 25.0
/
&electrons
   electron_maxstep = 100
   conv_thr = 1.0d-10
   mixing_mode = 'plain'
   mixing_beta = 0.7
   mixing_ndim = 8
   diagonalization = 'david'
   diago_david_ndim = 4
   diago_full_acc = .true.
   startingwfc = 'random'
/
CELL_PARAMETERS alat
       0.000000000   0.500000000   0.500000000
       0.500000000   0.000000000   0.500000000
       0.500000000   0.500000000   0.000000000
ATOMIC_SPECIES
  Si  28.086  Si.UPF
ATOMIC_POSITIONS crystal
  Si  -0.125000000  -0.125000000  -0.125000000
  Si   0.125000000   0.125000000   0.125000000
K_POINTS crystal_b
6
0.750 0.500 0.250  45
0.500 0.000 0.000  50
0.000 0.000 0.000  50
0.500 0.500 0.000  28
0.750 0.500 0.250  26
0.750 0.375 0.375  0
